SEMICONDUCTOR GAS SENSORS
Description of the project: Sensor elements are formed on a monocrystalline silicon substrate and include a stencil interdigital system of platinum measuring electrodes, a platinum film heater obtained by magnetron sputtering, and a sensitive layer based on individual oxides or composites (WO3, VO2, La1-xPbXMnO3), formed by ceramic technology.
The use of the developed gas sensors makes it possible to selectively detect the presence of a number of active gases in the air at a low temperature of the working layer of the sensor. It is used for the detection and quantitative monitoring of the presence of active donor-acceptor gases in air and other gaseous media.
Advantages: They are characterized by increased selectivity for individual gases, depending on the chemical composition of the sensitive layer, as well as lower operating temperatures, which makes it possible to reduce energy consumption during operation.