The thinnest semiconductor in the world was invented in Russia

Every year corporations work on the development of new technical processes, reducing the size of electronics. Scientists from the Russian National Research Technological University “MISiS” have achieved particular success. In collaboration with specialists from the National Institute of Materials Science of Japan, Beijing Transport University and the Queensland University of Technology, they managed to create the world’s thinnest semiconductor with specified properties and a thickness of only one molecule.

“A new semiconductor material based on boron nitride has been obtained. It can change the bandgap in a controlled way by changing the oxygen concentration. The proposed method makes it possible to quickly and simply – and therefore cheaply – obtain material with a controlled band gap, ”said Leonid Chernozatonsky, Chief Researcher at the Institute of Biochemical Physics of the Russian Academy of Sciences.

Scientists managed to build a theoretical model of the new material using the Cherry supercomputer cluster at NUST MISIS. It is a boron nitride film on which oxygen is applied to create a microcircuit. Then, during the experiment, they managed to create a prototype corresponding to the resulting model.

“Our discovery will make it possible to actively use this material in such fields of science and technology as photovoltaics, optoelectronics, energy storage,” said Pavel Sorokin, a leading researcher at the Inorganic Nanomaterials laboratory at NUST MISIS.

The development of Russian scientists opens up opportunities for the creation of energy-efficient nanoprocessors that will be thousands of times more compact than the existing ones. All this will allow to reduce the size of batteries and create so-called “invisible” electronics, such as weightless pacemakers, glasses with augmented reality, phones in the form of earrings, etc.

Source: iz.ru